Electrical properties of MIS capacitor using low temperature electron beam gun - evaporated HfAlO dielectrics
نویسندگان
چکیده
A low effective oxide thickness of 1.45 nm was achieved in HfAlO films deposited by an electron beam gun evaporator on unheated p-Si substrate. A reduction of the leakage current density from 1 · 10 4 to 4.5 · 10 7 A/cm, at an electric field 3 MV/cm, with annealing temperature and a breakdown electric field of 10 MV/cm were demonstrated for ultra thin films. 2004 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 45 شماره
صفحات -
تاریخ انتشار 2005